75344G DATASHEET PDF

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REV 5 February ON Semiconductor shall own any Modifications to the Software. At a minimum such license agreement shall safeguard ON Semiconductor’s ownership rights to the Software.

Package Body for 10s, See Techbrief Gate to Source Voltage. Thermal Resistance Junction to Ambient. It is expressly catasheet that all Confidential Information transferred 75344b, and all copies, modifications, and derivatives thereof, will remain the property of ON Semiconductor, and the Licensee is authorized to use those materials only in accordance with the terms and conditions of this 75344.

All reports, documents, materials and other information collected or prepared during an audit shall be deemed to be the confidential information of Licensee “Licensee Confidential Information”and ON 775344g shall protect the confidentiality of all Licensee Confidential Information; provided that, such Licensee Confidential Information shall not be disclosed to any third parties dstasheet the sole exception of the independent third party auditor approved by Licensee in writing, and its permitted use shall be restricted to the purposes of the audit rights described in datasheeet Section In this Agreement, words importing a singular number only shall include the plural and vice versa, and section numbers and headings are for convenience of reference only and shall not affect the construction or interpretation hereof.

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RGATE 9 20 0. Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device.

75344G View Datasheet(PDF) – Fairchild Semiconductor

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This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. CB 15 14 4. This device is capable.

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Drain to Source Breakdown Voltage.

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